TS4962MEIKJT View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
TS4962MEIKJT Datasheet PDF : 41 Pages
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Electrical characteristics
TS4962M
Table 8. VCC = 2.5 V, GND = 0 V, VIC = 2.5 V, Tamb = 25 °C (unless otherwise specified)
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
ICC
ISTBY
VOO
Supply current
Standby current (1)
Output offset voltage
Pout Output power
THD + N
Total harmonic
distortion + noise
Efficiency Efficiency
PSRR
Power supply
rejection ratio with
inputs grounded (2)
No input signal, no load
No input signal, VSTBY = GND
No input signal, RL = 8 Ω
G=6dB
THD = 1% max., F = 1 kHz, RL = 4 Ω
THD = 10% max., F = 1 kHz, RL = 4 Ω
THD = 1% max., F = 1 kHz, RL = 8 Ω
THD = 10% max., F = 1 kHz, RL = 8 Ω
Pout = 200 mWRMS, G = 6 dB, 20 Hz < F<
20 kHz
RL = 8 Ω + 15 µH, BW < 30 kHz
Pout = 200 WRMS, G = 6 dB, F = 1 kHz,
RL = 8 Ω + 15 µH, BW < 30 kHz
Pout = 0.47 WRMS, RL = 4 Ω + ≥ 15 µH
Pout = 0.3 WRMS, RL = 8 Ω+ ≥ 15 µH
F = 217 Hz, RL = 8 Ω, G=6 dB,
Vripple = 200 mVpp
CMRR
Common-mode
rejection ratio
F = 217 Hz, RL = 8 Ω, G = 6 dB,
ΔVicm = 200 mVpp
Gain Gain value
Rin in kΩ
RSTBY
FPWM
SNR
tWU
tSTBY
Internal resistance
from Standby to GND
Pulse width modulator
base frequency
Signal to noise ratio
Wake-up time
A-weighting, Pout = 1.2 W, RL = 8 Ω
Standby time
1.7 2.4 mA
10 1000 nA
3
25 mV
0.52
0.71
W
0.33
0.42
1
%
0.19
78
88
%
60
dB
54
dB
2----7---3----k---Ω---
Rin
-3---0---0----k----Ω---
Rin
3----2---7----k---Ω---
Rin
273 300 327
V/V
kΩ
180 250 320 kHz
80
dB
5
10 ms
5
10 ms
14/41
DocID11703 Rev 6
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