TS4962MEIJT View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
TS4962MEIJT Datasheet PDF : 41 Pages
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Electrical characteristics
4
Electrical characteristics
TS4962M
Table 4. VCC = 5 V, GND = 0 V, VIC = 2.5 V, tamb = 25 °C (unless otherwise specified)
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
ICC
ISTBY
VOO
Supply current
Standby current (1)
Output offset voltage
Pout Output power
THD + N
Total harmonic
distortion + noise
Efficiency Efficiency
PSRR
Power supply
rejection ratio with
inputs grounded (2)
No input signal, no load
No input signal, VSTBY = GND
No input signal, RL = 8 Ω
G=6 dB
THD = 1% max., F = 1 kHz, RL = 4 Ω
THD = 10% max., F = 1 kHz, RL = 4 Ω
THD = 1% max., F = 1 kHz, RL = 8 Ω
THD = 10% max., F = 1 kHz, RL = 8 Ω
Pout = 900 mWRMS,
G = 6 dB, 20 Hz < F < 20 kHz
RL = 8 Ω + 15 µH, BW < 30 kHz
Pout = 1 WRMS, G = 6 dB, F = 1 kHz,
RL = 8 Ω + 15 µH, BW < 30 kHz
Pout = 2 WRMS, RL = 4 Ω + ≥ 15 µH
Pout =1.2 WRMS, RL = 8 Ω+ ≥ 15 µH
F = 21 Hz, RL = 8 Ω, G=6 dB,
Vripple = 200 mVpp
CMRR
Common-mode
rejection ratio
F = 217 Hz, RL = 8 Ω, G = 6 dB,
ΔVicm = 200 mVpp
Gain Gain value
Rin in kΩ
RSTBY
FPWM
SNR
tWU
tSTBY
Internal resistance
from Standby to GND
Pulse width modulator
base frequency
Signal to noise ratio A-weighting, Pout = 1.2 W, RL = 8 Ω
Wake-up time
Standby time
2.3 3.3 mA
10 1000 nA
3
25 mV
2.3
3
W
1.4
1.75
1
%
0.4
78
88
%
63
dB
57
dB
-2---7-R--3---i-kn----Ω--
-3---0-R--0--i--kn---Ω----
-3---2---7----k---Ω---
Rin
V/V
273 300 327 kΩ
180 250 320 kHz
85
dB
5
10 ms
5
10 ms
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DocID11703 Rev 6
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