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TS4962MEIKJT View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
TS4962MEIKJT
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TS4962MEIKJT Datasheet PDF : 41 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
TS4962M
Table 5. VCC = 4.2V, GND = 0V, VIC = 2.5V, Tamb = 25°C (unless otherwise specified) (1)
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
ICC
ISTBY
Supply current No input signal, no load
Standby current
(2)
No input signal, VSTBY = GND
2.1
3
mA
10 1000 nA
VOO
Output offset
voltage
No input signal, RL = 8 Ω
3
25
mV
G=6dB
THD = 1% max, F = 1 kHz,
RL = 4 Ω
THD = 10% max, F = 1 kHz,
Pout Output power RL = 4 Ω
THD = 1% max, F = 1 kHz,
RL = 8 Ω
THD = 10% max, F = 1 kHz,
RL = 8 Ω
1.6
2
W
0.95
1.2
Pout = 600mWRMS, G = 6 dB,
Total harmonic
THD + N distortion +
noise
20 Hz < F < 20k Hz
RL = 8 Ω + 15 µH, BW < 30 kHz
Pout = 700 mWRMS, G = 6 dB,
F = 1 kHz,
1
0.35
%
RL = 8 Ω + 15 µH, BW < 30 kHz
Pout = 1.45 WRMS, RL = 4 Ω +
Efficiency Efficiency
15 µH
Pout =0.9 WRMS, RL = 8 Ω+
78
88
%
15 µH
Power supply
PSRR
rejection ratio
with inputs
F = 217 Hz, RL = 8 Ω, G=6 dB,
Vripple = 200 mVpp
63
dB
grounded (3)
CMRR
Common-mode F = 217 Hz, RL = 8 Ω, G = 6 dB,
rejection ratio ΔVicm = 200 mVpp
57
dB
Gain Gain value
Rin in kΩ
-2---7---3----k----Ω--
Rin
-3---0---0----k----Ω---
Rin
-3---2---7----k---Ω---
Rin
V/V
RSTBY
Internal
resistance from
Standby to GND
273 300 327
kΩ
FPWM
Pulse width
modulator base
frequency
180 250 320 kHz
SNR
tWU
tSTBY
Signal to noise
ratio
Wake-uptime
Standby time
A-weighting, Pout = 0.9 W,
RL = 8 Ω
85
dB
5
10
ms
5
10
ms
8/41
DocID11703 Rev 6

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