TS2012EI View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
TS2012EI Datasheet PDF : 32 Pages
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TS2012EI
Electrical characteristics
Table 7. VCC = +3.6 V, GND = 0 V, Vic = 1.8V , Tamb = 25° C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Unit
Supply current
ICC
No input signal, no load, both channels
3.5
5.5
mA
ISTBY
Voo
Po
THD + N
Efficiency
PSRR
Crosstalk
CMRR
Gain
Standby current
No input signal, VSTBY = GND
Output offset voltage
Floating inputs, G = 6 dB, RL = 8
Output power
THD + N = 1% max, f = 1 kHz, RL = 4
THD + N = 1% max, f = 1 kHz, RL = 8
THD + N = 10% max, f = 1 kHz, RL = 4
THD + N = 10% max, f = 1 kHz, RL = 8
Total harmonic distortion + noise
Po = 0.45 W, G = 6 dB, f = 1 kHz, RL = 8
Efficiency per channel
Po = 0.96 W, RL = 4
Po = 0.63 W, RL = 8
Power supply rejection ratio with inputs grounded
Cin = 1 µF (1),f = 217 Hz, RL = 8 Gain = 6 dB
Vripple = 200 mVpp
Channel separation
G = 6 dB, f = 1 kHz, RL = 8
Common mode rejection ratio
Cin = 1 µF, f = 217 Hz, RL = 8 Gain = 6 dB
VICM = 200 mVpp
Gain value with no load
G1 = G0 = VIL
G1 = VIL and G0 = VIH
G1 = VIH and G0 = VIL
G1 = G0 = VIH
0.7
2
µA
25
mV
0.96
0.63
W
1.3
0.8
0.35
%
78
%
88
65
dB
90
62
dB
5.5
6
6.5
11.5
12
12.5
dB
17.5
18
18.5
23.5
24
24.5
Single-ended input impedance
Referred to ground
Gain = 6 dB
Zin
Gain = 12 dB
Gain = 18 dB
Gain = 24 dB
24
30
36
k
24
30
36
12
15
18
6
7.5
9
FPWM
SNR
tWU
Pulse width modulator base frequency
Signal-to-noise ratio (A-weighting)
Po = 0.6 W, G = 6 dB, RL = 8
Total wake-up time(2)
190 280 370
kHz
96
dB
7.5
11.3
15
ms
DocID026152 Rev 1
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