2N6531 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2N6531

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2N6531

DESCRIPTION

·High DC Current Gain-

: hFE= 500(Min.)@IC= 3A

·Collector-Emitter Sustaining Voltage-

:VCEO(SUS)= 100V(Min.)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat)= 3.0V(Max.)@ IC= 3A

APPLICATIONS

·Power switching

·Hammer drivers

·Series and shunt regulators

·Audio amplifiers

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VCBO

Collector-Base Voltage

VCER

Collector-Emitter Voltage RBE= 100Ω

VCEV

Collector-Emitter Voltage VBE= -1.5V

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current

ICM

Collector Current-peak

IB

Base Current

PC

Collector Power Dissipation

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature Range

VALUE UNIT

100

V

100

V

100

V

100

V

5

V

8

A

15

A

250

mA

65

W

150

℃

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX

1.92

UNIT

℃/W

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

Share Link: