2N3053 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2N3053 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3053
DESCRIPTION
·Maximun SOA Curve
·High gain-bandwidth Product
: fT = 100MHz
·Low Leakage Current
APPLICATIONS
·Designed for audio amplifiers ,controlled amplifiers ,ower supplies, power oscillators and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VCER Collector – Emitter Sustaining Voltage
50
V
VCEX
Collector - Emiiter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
0.7
A
Collector Power Dissipation@TA=25℃
1
W
PC
Collector Power Dissipation@TC=25℃
5
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-c
Thermal Resistance,Junction to Ambient
Thermal Resistance,Junction to Case
MAX
175
35
UNIT
℃/W
℃/W
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
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