2N3053 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2N3053

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

2N3053

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-Base Breakdown Voltage

IC=0.1mA ; IE=0

V(BR)EBO Emitter-Base Breakdown Voltage

VCEO(SUS) Collector – Emitter Voltage

VCER(SUS) Collector – Emitter Voltage

VCE(sat) Collector-Emitter Saturation Voltage

VBE(sat) Base-Emitter Saturation Voltage

ICBO

Collector Cutoff Current

IC=0.1mA ; IE=0

IB = 100mA ;IB = 0

RBE = 10W IC= 100mA

IC=150mA; IB= 15mA

IC= 150mA ; IB=15mA

VCE=30V; IB=0

IEBO

Emitter Cutoff Current

VEB= 4V; IC=0

h21E

Static Forward Current Transfer ratio IC= 0.15A ; VCE= 10V

fT

Current Gain-Bandwidth Product

IC= 50mA ; VCE= 10V;f=20MHz

C22b

Output Capacitance

VCB = 10V f =1MHz

C11b

Input Capacitance

VCB = 10V f =1MHz

MIN MAX UNIT

60

V

5

V

40

V

50

V

1.4

V

1.7

V

0.25 uA

0.25 uA

50 250

100

MHz

15 pF

80 pF

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

2

Share Link: