SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 40V(Min)
·Low Saturation Voltage-
: VCE (sat)= 1V(Max)@IC= 2.0A
APPLICATIONS
·Designed for a wide variety of medium-power switching and
amplifier applications , such as series and shunt regulators
and driver and output stages of high-fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
60
VCEV
Collector-Emitter Voltage
VBE= -1.5V
60
VCER
Collector-Emitter Voltage
RBE= 100Ω
50
VCEO
Collector-Emitter Voltage
40
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
7
IB
Base Current
3
Collector Power Dissipation
PC
@ Ta=25℃
Collector Power Dissipation
@ TC=25℃
1.8
50
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
2.5 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W
SPTECH website:www.superic-tech.com
2N5491
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