2N5873 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2N5873

Silicon NPN Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistors

DESCRIPTION

·Low Collector Saturation Voltage-

: VCE(sat)= 1.0V(Max.)@ IC= 5A

·DC Current Gain-

: hFE= 20-100 @IC= 2.5A

APPLICATIONS

·Designed for medium-speed switching and amplifier

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

7

A

IB

Base Current-Continuous

2

A

PC

Collector Power Dissipation@TC=25℃

115

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

1.17 ℃/W

SPTECH website：www.superic-tech.com

2N5873

1

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