2N3234 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2N3234 Datasheet PDF : 2 Pages
| |||
,U na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N3234
DESCRIPTION
• Excellent Safe Operating Area
• DC Current Gain-hFE= 18-S5@ lc= 3A
• Collector-Emitter Saturation Voltage-
: VcEfsatr 2.5V(Max)@ lc = 3A
• Collector-Emitter Sustaining Voltage-
: VCEo(sus)= 160V(Min)
APPLICATIONS
• Designed for general purpose high power switch and
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
7
V
lc
Collector Current-Continuous
7.5
A
PC
Collector Power Dissipation@Tc=25"C
117
W
Tj
Junction Temperature
200
r
Tstg
Storage Temperature
-65-200 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.5
"C/W
3
PIN
LEASE
2. EMITTER
3. COLLECT OR (CASE)
2
TO-3 package
**»
k
1 : i
te
i_ C
-JU-D ZPL
13H
H/ck^x / 1- t
^-3-—^ = B
\^j ^S'P
Cf
'f
1
J
V
nun
DIM MM KAX
A
39.00
B 25.30 26.67
t
7-80 8.30
D 0.90 1 10
E
MO 1.60
(5
1092
H
546
K 1140 1350
L 1675 17,05
N 1940 1962
Q
4.00 420
U 30.00 3020
V
430 450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of'egoing
to press, I louevor. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Scmi-C'ondiictors encourages customers to verify that datasheets are current before placing orders.
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