2N3234 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

2N3234

Silicon NPN Power Transistor

New Jersey Semiconductor 

Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

Tc=25"C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 200mA; IB= 0

VcE(sat)

Collector-Emitter Saturation Voltage lc= 3A; IB= 0.2A

VsE(on) Base-Emitter On Voltage

lc=3A;VCE=10V

ICEV

Collector Cutoff Current

VCE=1 60V; VB6(0ffl= 1-5V

IEBO

Emitter Cutoff Current

VEB= 7.0V;lc= 0

hFE

DC Current Gain

lc=3A;VCE=10V

fr

Current Gain-Bandwidth Product

lc= 0.5A; VCE= 4V; f= 1.0MHz

2N3234

MIN MAX UNIT

160

V

2.5

V

3.5

V

1

mA

5.0

mA

18

55

1.0

MHz

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