2N5069 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2N5069 Datasheet PDF : 2 Pages
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ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted )
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
VCEOCSUS)
( lc = 200 mA, I. = 0 )
2N4901 .2N5067
40
2N4902.2NS068
60
2N4903.2N5069
80
Collector Cutoff Current
'CEO
(VCI= Rated VCE01IS = 0)
Collector Cutoff Current
"CEX
( V,.. = Rated VCE0. VBE(on) = 1.5 V)
( VCE = Rated VCBO, V^ = 1 .5 V, Tc = 150'C )
Collector Cutoff Current
ICBO
( V^ Rated VCBQ, IE =0)
Emitter Cutoff Current
'EBO
(V€B-5.0V,IC = 0)
ON CHARACTERISTICS (1)
DC Current Gain
(IC=1.0A,VCE = 2.0V)
( lc » 5.0 A, Vcg = 2.0 V )
Collector-Emitter Saturation Voltage
(IC = 1.0A,IB»0.1 A)
(lc = 5.0 A, IB -1.0 A)
Base-Emitter On Voltage
(IC = 1.0A.VCB = 2.0V)
DYNAMIC CHARACTERISTICS
Current - Gain -Bandwidth Product (2)
(lc=1.0A,V06 = 10V,f*1.0MHz)
Small-Signal Current Gain
( lc = 0.5 A, VCE = 1 0 V, f = 1 .0 KHz )
(1) Pulse Test: Pulse width - 300 us , Duty Cycle < 2.0%
hFE
20
7.0
VCE,-,)
V—
fT
4.0
".
20
Max
Unit
V
mA
1.0
0.1
mA
on
mA
0.1
mA
1.0
80
V
0.4
1.5
V
1.2
MHz
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