2N6579 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2N6579

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Excellent Safe Operating Area

·High Voltage,High Speed

·Low Saturation Voltage

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 350V(Min)

APPLICATIONS

·Off-line power supplies

·Switching amplifiers

·Inverters/Converters

·Motor speed control circuits

·Switching regulator

·Solenoid& relay drivers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO Collector-Base Voltage

450

V

VCEO Collector-Emitter Voltage

350

V

VEBO

Emitter-Base Voltage

9.0

V

IC

Collector Current-Continuous

10

A

ICM

Collector Current-Peak

16

A

IB

Base Current-Continuous

5

A

PC

Collector Power Dissipation@TC=25℃ 125

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX

1.4

UNIT

℃/W

SPTECH website：www.superic-tech.com

2N6579

1

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