2N6579 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2N6579

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

2N6579

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0

350

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A

1.5

V

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 5A

3.0

V

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB= 1A

1.5

V

IEBO

Emitter Cutoff Current

VEB= 9.0V; IC= 0

0.1 mA

hFE

DC Current Gain

IC= 5A ; VCE= 3V

7

35

fT

Current Gain-Bandwidth Product

IC= 1A ; VCE= 10V; ftest=10MHz

12.5 50 MHz

COB

Output Capacitance

IE= 0; VCB= 10V; ftest=1.0MHz

75 250 pF

Switching times-Resistive Load

td

Delay Time

0.05 μs

tr

Rise Time

ts

Storage Time

IC= 5A, IB1= -IB2= 1A, VCC= 150V; R= 30Ω

tp=100μs; Duty Cycle≤2.0%

0.5 μs

2.0 μs

tf

Fall Time

0.5 μs

SPTECH website：www.superic-tech.com

2

Share Link: