2N3027 View Datasheet(PDF) - Digitron Semiconductors
Part Name
Description
Manufacturer
2N3027 Datasheet PDF : 7 Pages
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DIGITRON SEMICONDUCTORS
2N3027-2N3032
0.5 AMP SILICON CONTROLLED RECTIFIER
ELECTRICAL CHARACTERISTIC (@ 25°C unless otherwise noted) (2N3030-2N3032)
Parameter
Symbol Min.
Typ.
Max. Unit
Test Condition
25°C tests
Off state current
Reverse current
IDRM
IRRM
-
0.002
0.100
µA RGK = 1KΩ, VDRM = rating
-
0.002
0.100
µA RGK = 1KΩ, VRRM = rating
Reverse gate voltage
VGR
5
8
-
V IGR = 0.1mA
Gate trigger current
IGT
-5
20
µA RGS = 10KΩ, VD = 5V
Gate trigger voltage
VGT
0.440
0.600
V RGS = 100Ω, VD = 5V
On-state voltage
VT
0.800
1.200
1.500
V IT = 1A (pulse test)
Holding current
IH
0.300
1.000
4.000
mA RGK = 1KΩ, VD = 5V
30
60
Off-state voltage – critical rate of rise
dv/dt
15
30
10
25
-
RGK = 1KΩ, VD = 30V (2N3030)
-
V/µs RGK = 1KΩ, VD = 60V (2N3031)
-
RGK = 1KΩ, VD = 100V (2N3032)
Gate trigger-on pulse width
Delay time
tpg(on)
td
-
0.050
0.100
µs IG = 10mA, IT = 1A, VD = 30V
-
0.100
-
µs IG = 10mA, IT = 1A, VD = 30V
Rise time
tr
-
0.050
-
µs IG = 10mA, IT = 1A, VD = 30V
Circuit commutated turn-off time
tg
-
0.700
2.000
µs IT = 1A, IR = 1A, RGK = 1K
150°C Tests
High temperature off-state current
IDRM
-
2
20
µA RGK = 1KΩ, VDRM = rating
High temperature reverse current
IRRM
-
20
50
µA RGK = 1KΩ, VRRM = rating
High temperature gate trigger voltage
VGT
0.100
0.150
0.400
V RGS = 100Ω, VD = 5V
High temperature holding current
IH
0.050
0.300
2.000
mA RGK = 1K, VD = 5V
-65°C Tests
Low temperature gate trigger voltage
VGT
0.440
0.800
0.950
V RGS = 100Ω, VD = 5V
Low temperature gate trigger current
IGT
0
0.400
0.500 mA RGS = 10KΩ, VD = 5V
Low temperature holding current
IH
0.500
5.000
8
mA RGK = 1KΩ, VD = 5V
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130116
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