MB84VD2108XEM/2109XEM-70
(Continued)
Parameter
Symbol
Test Conditions
Value
Unit
Min Typ Max
SRAM VCC Standby Current
ISB1s
CE1s > VCCs โ 0.2 V, CE2s > VCCs โ 0.2 V
LB = UB > VCCsโ0.2 V or < 0.2 V
โ
โ
7 ยตA
SRAM VCC Standby Current
ISB2s
CE1s > VCCs โ 0.2 V or < 0.2 V,
CE2s < 0.2 V
LB = UB > VCCsโ0.2 V or < 0.2V
โ
โ
7 ยตA
Input Low Level
VIL
โ
โ0.3
โ
0.5 V
Input High Level
VIH
โ
2.4
โ
VCC+0.3
*6
V
Voltage for Sector
Protection, and Temporary
Sector Unprotection
VID
โ
11.5 โ 12.5 V
(RESET) *4
Voltage for Program
Acceleration (WP/ACC) *4
VACC
โ
8.5
9.0 9.5 V
SRAM Output Low Level
VOL VCCs = VCCs Min, IOL = 4.0 mA
โ
โ 0.45 V
SRAM Output High Level
VOH VCCs = VCCs Min, IOH = โ0.5 mA
2.4
โ
โV
Flash Output Low Level
VOL VCCf = VCCf Min, IOL = 4.0 mA
โ
โ
0.4 V
Flash Output High Level
VOH VCCf = VCCf Min, IOH = โ0.5 mA
2.4
โ
โV
Flash Low VCCf Lock-Out
Voltage
VLKO
โ
2.3
โ
2.5 V
* 1 : The ICC current listed includes both the DC operating current and the frequency dependent component.
*2 : ICC active while Embedded Algorithm (program or erase) is in progress.
*3 : Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
*4 : Applicable for only VCCf applying.
*5 : Embedded Algorithm (program or erase) is in progress. (@5 MHz)
*6 : VCC indicates lower of VCCf or VCCs.
11