RB530S-30 View Datasheet(PDF) - SUNMATE electronic Co., LTD

Part Name

Description

Manufacturer

RB530S-30

100mA Surface Mount Schottky Barrier Diode

SUNMATE electronic Co., LTD 

1000

100

Ta=125C

10 Ta=75C

1

Ta=-25C

0.1

Ta=25C

0.01

0.001

0

100 200 300 400 500 600

FORWARD VOLTAGE : VF(mV)

VF-IF CHARACTERISTICS

1000000

100000

10000

Ta=125

Ta=75C

1000

100

Ta=25C

10

Ta=-25C

1

0.1

0

10

20

30

REVERSE VOLTAGE : VR(V)

VR-IR CHARACTERISTICS

370

Ta=25C

1000

VF=10mA

900

Ta=25C

360

n=30pcs

800

VR=10V

n=30pcs

700

350

600

500

340

400

AVE : 347.5mV

330

300

AVE : 108.3nA

200

100

320

0

100

f=1MHｚ

10

1

0

5

10

15

20

REVERSE VOLTAGE : VR(V)

VR-Ct CHARACTERISTICS

20

19

Ta=25C

18

f=1MHz

VR=0V

17

n=10pcs

16

15

AVE : 16.28pF

14

13

12

11

10

VF DISPERSION MAP

20

1cyc

Ifsm

15

8.3ms

10

AVE : 4.20A

5

0

IFSM DISRESION MAP

IR DISPERSION MAP

10

Ifsm

8.3ms 8.3ms

1cyc

5

0

1

10

100

NUMBER OF CYCLES

IFSM-CYCLE CHARACTERISTICS

1000

100

10

Rth(j-a)

Rth(j-c)

1

0.001 0.01 0.1

1

10 100 1000

TIME : t(s)

Rth-t CHARACTERISTICS

0.1

DC

0.08

D=1/2

0.06

Sin(=180)

0.04

0.02

0

0

0.05

0.1

0.15

0.2

AVERAGE RECTIFIED

FORWARD CURRENT : Io(A)

Io-Pf CHARACTERISTICS

Ct DISPERSION MAP

10

Ifsm

t

5

0

1

10

100

TIME : t(ms)

IFSM-t CHARACTERISTICS

0.02

0.015

0.01

0.005

0

0

Sin(=180)

DC

D=1/2

5

10

15

20

25

30

REVERSE VOLTAGE : VR(V)

VR-PR CHARACTERISTICS

2of3

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