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MBRS120T3G(2012) View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
MBRS120T3G
(Rev.:2012)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MBRS120T3G Datasheet PDF : 4 Pages
1 2 3 4
MBRS120T3G, SBRS8120T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
20
V
VRWM
VR
Average Rectified Forward Current
(TL = 115C)
IF(AV)
A
1.0
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
A
40
Operating Junction Temperature
TJ
65 to +125
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoLead
(TL = 25C)
Symbol
RJL
Value
12
Unit
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 1.0 A, TJ = 25C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25C)
(Rated dc Voltage, TJ = 100C)
1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.
Symbol
Value
Unit
VF
V
0.6
iR
mA
1.0
10
100
1 TC = 100C
0.7
0.5
0.3
0.2
50
30
20
TJ = 125C
10
100C
5
3
2
1
75C
0.1
0.07
0.05
TC = 25C
0.5
0.3
0.2
25C
0.1
0.05
0.03
0.03
0.02
0.02
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 0.01 0
4
8 12 16 20 24 28 32 36 40
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
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