DM-111A View Datasheet(PDF) - Sony Semiconductor
Part Name
Description
Manufacturer
DM-111A Datasheet PDF : 7 Pages
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Example Representative Characteristics
Midpoint potential vs. Magnetic field Intensity
2.55
2.54
VCC=5V
Ta=25˚C
2.53
2.52
2.51
2.50
2.49
2.48
2.47
2.46
2.45
0
10000
20000
H-Revoluing magnetic field intensity (Oe)
Output voltage vs. Magnetic fiels Intensity
100
80
VCC=5V
Ta=25˚C
60
40
20
0
0
10000
20000
H-Revolving magnetic field intensity (Oe)
DM-111A
Midpoint potential vs. Magnetic-flux Incidence
2.55
2.54
2.53
1.VCC=5V
2. Output
3. GND
2.52
2.51
H=4000A/m
Ta=25˚C
2.50
2.49
2.48
111A θ
2.47
2.46
123
2.45
0
45
90
135
180
225
θ-Direction of magnetic-flux Incidence (deg)
Total resistance, output voltage vs. Temperature
100
900
90
80
800
RT
70
60
700
VO
50
40
600
H=4000A/m
30
(Revolving magnetic fiels)
20
500
10
0
400
–50 –25 0 25 50 75 100 125 150
Ta-Ambient temperature (˚C)
—6—
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