AS6C3216A-55BIN View Datasheet(PDF) - Alliance Semiconductor
Part Name
Description
Manufacturer
AS6C3216A-55BIN Datasheet PDF : 11 Pages
| |||
AS6C3216A-55BIN
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
AC ELECTRICAL CHARACTERISTICS
0.2V to VCC - 0.2V
3ns
1.5V
CL = 30pF + 1TTL, IOH/IOL = -1mA/2mA
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
LB#, UB# Access Time
LB#, UB# to High-Z Output
LB#, UB# to Low-Z Output
SYM.
tRC
tAA
tACE
tOE
tCLZ*
tOLZ*
tCHZ*
tOHZ*
tOH
tBA
tBHZ*
tBLZ*
AS6C3216A-55BIN
MIN.
MAX.
55
-
-
55
-
55
-
30
10
-
5
-
-
20
-
20
10
-
-
55
-
20
10
-
(2) WRITE CYCLE
PARAMETER
SYM.
AS6C3216A-55BIN
MIN.
MAX.
Write Cycle Time
tWC
55
-
Address Valid to End of Write
tAW
50
-
Chip Enable to End of Write
tCW
50
-
Address Set-up Time
tAS
0
-
Write Pulse Width
tWP
45
-
Write Recovery Time
tWR
0
-
Data to Write Time Overlap
tDW
25
-
Data Hold from End of Write Time
tDH
0
-
Output Active from End of Write
tOW*
5
-
Write to Output in High-Z
tWHZ*
-
20
LB#, UB# Valid to End of Write
tBW
50
-
*These parameters are guaranteed by device characterization, but not production tested.
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Confidential
- 5 of 11 -
Rev.1.0 June 2017
Share Link: 