AS6C3216A-55BIN View Datasheet(PDF) - Alliance Semiconductor

Part Name

Description

Manufacturer

AS6C3216A-55BIN

2048K x 16bit Low Power CMOS SRAM

Alliance Semiconductor 

AS6C3216A-55BIN

DATA RETENTION CHARACTERISTICS

PARAMETER SYMBOL

TEST CONDITION

VCC for Data Retention

VDR CE#≧VCC - 0.2V or CE2≦0.2V

Data Retention Current

VCC = 1.2V

IDR CE# ≧VCC-0.2V or CE2≦0.2V

Other pins at 0.2V or VCC-0.2V

40℃

85℃

Chip Disable to Data

Retention Time

Recovery Time

tRC* = Read Cycle Time

tCDR See Data Retention Waveforms (below)

tR

DATA RETENTION WAVEFORM

Low VCC Data Retention Waveform (1) (CE# controlled)

Vcc

CE#

Vcc(min.)

tCDR

VIH

VDR ≧ 1.2V

CE# ≧ Vcc-0.2V

Vcc(min.)

tR

VIH

MIN. TYP. MAX. UNIT

1.2 - 3.6 V

- 6.5 18 µA

-

- 80 µA

0

-

tRC*

-

- ns

- ns

Low VCC Data Retention Waveform (2) (CE2 controlled)

Vcc

CE2

Vcc(min.)

tCDR

VIL

VDR ≧ 1.2V

CE2 ≦ 0.2V

Low VCC Data Retention Waveform (3) (LB#, UB# controlled)

Vcc

LB#,UB#

Vcc(min.)

tCDR

VIH

VDR ≧ 1.2V

LB#,UB# ≧ Vcc-0.2V

Vcc(min.)

tR

VIL

Vcc(min.)

tR

VIH

Confidential

- 9 of 11 -

Rev.1.0 June 2017

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