BZX55B View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
BZX55B Datasheet PDF : 2 Pages
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J£I±EU
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BZX55B
SILICON PLANAR ZENER DIODES
Jjrzc.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
-U- Mm 275
Glass Case DO-35
Dimensions in mm
Glass Case DO-34
Dimensions in mm
Absolute Maximum Ratings (Ta = 25 °C)
Parameter
Symbol
Value
Unit
Power Dissipation
Junction Temperature
Storage Temperature Range
Plot
500 1>
mW
Tj
175
°C
Ts
-55 to + 175
°C
1> Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
Characteristics at Ta = 25 °C
Parameter
Symbol
Max.
Thermal Resistance Junction to Ambient Air
RthA
0.3 1)
Forward Voltage
at IF= 100 mA
VF
1
1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
Unit
K/mW
V
NJ Semi-Conductors reserves the right to changetest conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheetsare current before placing orders.
Quality Semi-Conductors
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