ULBM2SL
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM2SL is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
0.75 A
VCBO
36 V
VCER
16 V
VCES
36 V
VEBO
PDISS
TJ
TSTG
θJC
4.0 V
5.0 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
35.0 OC/W
PACKAGE STYLE .280 4L PILL
A
ØB
ØC
D
EF
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
C
.275 / 6.99
D
.004 / 0.10
E
.050 / 1.27
F
.118 / 3.00
MAXIMUM
inches / mm
.230 / 5.84
1.055 / 26.80
.285 / 7.24
.006 / 0.15
.060 . 1.52
.130 / 3.30
ORDER CODE: ASI10678
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 25 mA
BVCES
IC = 5 mA
BVEBO
IE = 1 mA
ICBO
VCB = 15 V
ICER
VCE = 10 V
RBE = 80 Ω
hFE
VCE = 5.0 V
IC = 100 mA
MINIMUM TYPICAL MAXIMUM
16
36
4.0
1.0
0.5
40
200
UNITS
V
V
V
mA
mA
---
Cob
VCB = 7.5 V
f = 1.0 MHz
10
pF
PG
VCC = 12.5 V POUT = 2.0 W
f = 470 MHz
11.5
dB
ηC
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1