PAM8301AAF View Datasheet(PDF) - Diodes Incorporated.
Part Name
Description
Manufacturer
PAM8301AAF Datasheet PDF : 10 Pages
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A Product Line of
Diodes Incorporated
PAM8301
Thermal Information
Parameter
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
Package
TSOT26
TSOT26
Symbol
θJA
θJC
Max
250
130
Unit
°C/W
Electrical Characteristics (@TA = +25°C, VDD = 5V, Gain = 24dB, RL = 8Ω, unless otherwise specified.)
Symbol
VDD
IQ
ISHDN
VSH
VSL
Parameter
Supply Voltage Range
Quiescent Current
Shutdown Current
SHDN Input High
SHDN Input Low
RDS(ON) Drain-Source On-State Resistance
PO
Output Power
THD+N Total Harmonic Distortion Plus Noise
PSRR
GV
VN
fOSC
η
SNR
OTP
OTH
AC Power Supply Ripple Rejection
Gain
Output Noise
Oscillator Frequency
Peak Efficiency
Signal to Noise Ratio
Over Temperature Protection
Over Temperature Hysterisis
No Load
VSHDN = 0V
Test Conditions
IDS = 100mA
P MOSFET
N MOSFET
f = 1kHz
THD+N = 1%
THD+N = 10%
RL = 8Ω, PO = 200mW
RL = 8Ω, PO = 0.5W
No Inputs, f = 1kHz, VPP = 200mV
No A-Weighting
A-Weighting
f = 1kHz
f = 20 to 20kHz
Min Typ Max Units
2.5
5.5
V
4
8 mA
1
µA
1.2
V
0.4
0.45
Ω
0.20
1.2
W
1.5
0.2
%
0.3
45 50
dB
24
dB
180
µV
120
200 250 300 kHz
85 88
%
78
dB
135
°C
30
°C
PAM8301
Document number: DSxxxxx Rev. 1 - 3
3 of 10
www.diodes.com
July 2013
© Diodes Incorporated
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