BFY50 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

BFY50

MEDIUM POWER AMPLIFIER

STMicroelectronics 

BFY50/51

MEDIUM POWER AMPLIFIER

DESCRIPTION

The BFY50 and BFY52 are silicon planar

epitaxial NPN transistors in Jedec TO-39 metal

case. They are intended for general purpose

linear and switching applications.

TO-39

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VCBO

VCEO

V EBO

IC

ICM

Ptot

Tstg

Tj

Collect or-Base Voltage (IE = 0)

Collector-Emitter Voltage (IB = 0)

Emitt er-Base Voltage (IC = 0)

Collector Current

Collector Peak Current (tp < 5 ms)

Total Dissipation at Tamb ≤ 25 oC

at Tcase ≤ 25 oC

St orage Temperature

Max. Operating Junction Temperature

November 1997

Value

BFY50

BFY51

80

60

35

30

6

1

1.5

0.8

5

-65 to 200

200

Unit

V

V

V

A

A

W

W

oC

oC

1/5

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