BFY50 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
BFY50 Datasheet PDF : 5 Pages
| |||
BFY50/BFY51
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-Case
Rthj- amb Thermal Resistance Junction-Ambient
Max
35
Max
218
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
for BFY50
VCB = 60 V
VCB = 60 V
for BFY51
VCB = 40 V
VCB = 40 V
Tcas e = 100 oC
Tcas e = 100 oC
IEBO
V (BR)C BO
Emitter Cut-off Current
(IC = 0)
Co lle ct or- Bas e
Breakdown Voltage
(IE = 0)
VEB = 5 V
VEB = 5 V
Tcase = 100 oC
IC = 100 µA
for BFY50
for BFY51
V( BR)CEO ∗ Collect or-Emitter
Breakdown Voltage
(IB = 0)
V(BR)EBO
Em it t er -Base
Breakdown Voltage
(IC = 0)
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
IC = 30 mA
for BFY50
for BFY51
IC = 100 µA
IC = 150 mA
for BFY50
for BFY51
IC = 1 A
for BFY50
for BFY51
IB = 15 mA
IB = 0.1 A
VBE(s at)∗
hFE∗
Ba se-Em it t er
Saturation Voltage
DC Current G ain
hfe∗ Small Signal Current
Gain
IC = 150 mA IB = 15 mA
IC = 1 A
IB = 0.1 A
for BFY50
IC = 10 mA
IC = 150 mA
IC = 1A
for BFY51
IC = 10 mA
IC = 150 mA
IC = 1A
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 6 V
IC = 1 mA
for BFY50
for BFY51
IC = 10 mA
for BFY50
for BFY51
f = 1KHz
fT
Transit ion F requency IC = 50 mA VCE = 10 V
for BFY50
for BFY51
CCBO
Collector Base
Capacitance
IE = 0
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
VCB = 10 V f = 1MHz
Min. Typ.
80
60
35
30
6
0.14
0.14
0.7
0.7
0.95
1.5
20
40
30
55
15
30
30
55
40
70
15
40
25
30
45
60
60
100
50
110
10
M a x.
50
2.5
50
2.5
50
2.5
0.2
0.35
1
1.6
1.3
2
Unit
nA
µA
nA
µA
nA
µA
V
V
V
V
V
V
V
V
V
V
V
MHz
MHz
pF
2/5
Share Link: 