BFY50 View Datasheet(PDF) - Continental Device India Limited

Part Name

Description

Manufacturer

BFY50

SILICON PLANAR TRANSISTORS

Continental Device India Limited 

SILICON PLANAR TRANSISTORS

BFY50, BFY51, BFY52

TO-39

Metal Can Package

DESCRIPTION

Emitter Cut off Current

SYMBOL

IEBO

VEB=5V, IC=0

Tj =100oC

VEB=5V, IC=0

DC Current Gain

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

hFE

VCE(Sat) *

VBE(Sat) *

IC=10mA,VCE=6V

IC=150mA,VCE=6V

IC=1A,VCE=6V

IC=150mA,IB=15mA

IC=1A,IB=100mA

IC=1A,IB=100mA

DYNAMIC CHARACTERISTICS

Small Signal Current Gain

| hfe |

Output Capacitance

Cob

Transistors Frequency

fT

*Pulse Test: Pulse Width= 300µs, Duty Cycle =1%

IC=1mA, VCE=6V,

f=1kHz

VCB=12V, f=500kHz

IC=50mA, VCE=6V

f=20MHz

BFY50 BFY51 BFY52 UNITS

<50 <50 <50

µA

<2.8 <2.8 <2.8

µA

>20 >30 >30

>30 >40 >60

>15 >15 >15

<0.2 <0.35 <0.35

V

<0.1 <1.6 <1.6

V

<2.0 <2.0 <2.0

V

>10 >30 >30

<12 <12 <12

>60

>50 >50

pF

MHz

Continental Device India Limited

Data Sheet

Page 2 of 4

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