1SS373(2000) View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
1SS373 Datasheet PDF : 2 Pages
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS373
High Speed Switching Application
Small package
Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
1SS373
Unit in mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
15
Reverse voltage
VR
10
Maximum (peak) forward current
IFM
200
Average forward current
IO
100
Surge current (10ms)
IFSM
1
Power dissipation
P*
150
Junction temperature
Tj
125
Storage temperature range
Tstg
−55∼125
Operating temperature range
Topr
−40∼100
* Mounted on a glass epoxy circuit board of 20 × 20 mm
Pad dimension of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
V
V
mA
mA
A
mW
°C
°C
°C
JEDEC
―
EIAJ
TOSHIBA
―
1-1F1A
Weight: 1.9mg
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
― IF = 1mA
― IF = 5mA
― IF = 100mA
― VR = 10V
― VR = 0, f = 1MHz
Min Typ. Max Unit
― 0.18 ―
―
0.23 0.30
V
― 0.35 0.50
―
―
20
µA
―
20
40
pF
Equivalent Circuit (Top View)
Marking
961001EAA2
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ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications.
Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
• The information contained herein is subject to change without notice.
2000-09-14 1/2
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