STZT5401 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STZT5401

MEDIUM POWER AMPLIFIER

STMicroelectronics 

STZT5401

THERMAL DATA

Rthj-amb • Thermal Resistance Junction-Ambient

Rthj-tab • Thermal Resistance Junction-Collecor Tab

• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm

Max

Max

62.5

8

oC/W

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol

Parameter

Test Conditions

ICBO

IEBO

V(BR)CBO

Collector Cut-off

Current (IE = 0)

Emitter Cut-off Current

(IE = 0)

Collector-Base

Breakdown Voltage

(IE = 0)

VCB = -120 V

VEB = -3 V

IC = -100 µA

V(BR)CEO∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

VCE(sat)∗ Collector-Emitter

Saturation Voltage

VBE(sat)∗ Base-Emitter

Saturation Voltage

IC = -1 mA

IC = -10 µA

IC = -10 mA

IC = -50 mA

IC = -10 mA

IC = -50 mA

IB = -1 mA

IB = -5 mA

IB = -1 mA

IB = -5 mA

hFE∗ DC Current Gain

IC = -1 mA

IC = -10 mA

IC = -50 mA

VCE = -5 V

VCE = -5 V

VCE = -5 V

hfe

Small Signal Current IC = -1 mA VCE = -10 V f = 1 KHz

Gain

fT

Transition Frequency IC = -10 mA VCE = -10 V f = 1 MHz

CCBO

Collector-Base

Capacitance

IE = 0

VCB = -10 V f = 1 MHz

F

Noise Figure

f = 1 KHz ∆F = 200 Hz RG = 1KΩ

IC = -0.25 mA VCE = -5 V

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %

Min.

-160

-150

-5

50

60

50

40

100

Typ.

5

Max.

-50

-50

-0.2

-0.5

-1

-1

240

200

400

6

Unit

nA

nA

V

V

V

V

V

V

V

MHz

pF

dB

2/4

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