IRFS4310Z View Datasheet(PDF) - Kersemi Electronic Co., Ltd.
Part Name
Description
Manufacturer
IRFS4310Z Datasheet PDF : 10 Pages
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AUIRFS4310Z
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
D VDSS
RDS(on) typ.
max.
100V
4.8m:
6.0m:
● Lead-Free, RoHS Compliant
● Automotive Qualified *
G
ID (Silicon Limited)
c 127A
S ID (Package Limited) 120A
Absolute Maximum Ratings
Stresses beyond those listed under ?°Absolute Maximum Ratings?±
may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any
other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for exten
ded periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured underboard mounted
and still air conditions. Ambient temperature (TA) is 25??C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
d Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
e Single Pulse Avalanche Energy (Thermally Limited)
Ãd Avalanche Current
d Repetitive Avalanche Energy
f Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Symbol
RJC
RJA
Parameter
k Junction-to-Case
j Junction-to-Ambient (PCB Mount)
D2Pak
AUIRFS4310Z
Max.
127
90
120
560
250
1.7
± 20
130
See Fig. 14, 15, 22a, 22b,
18
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
Max.
0.6
40
Units
°C/W
2014-8-27
1
www.kersemi.com
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