IRFB4310PBF View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRFB4310PBF

HEXFET® Power MOSFET

International Rectifier 

IRF/B/S/SL4310PbF

Static @ TJ = 25°C (unless otherwise specified)

Symbol

V(BR)DSS

∆V(BR)DSS/∆TJ

RDS(on)

VGS(th)

IDSS

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Drain-to-Source Leakage Current

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

RG

Gate Input Resistance

Min. Typ. Max. Units

Conditions

100 ––– –––

––– 0.064 –––

––– 5.6 7.0

V VGS = 0V, ID = 250µA

d V/°C Reference to 25°C, ID = 1mA

g mΩ VGS = 10V, ID = 75A

2.0 ––– 4.0 V VDS = VGS, ID = 250µA

––– ––– 20 µA VDS = 100V, VGS = 0V

––– ––– 250

VDS = 100V, VGS = 0V, TJ = 125°C

––– ––– 200 nA VGS = 20V

––– ––– -200

VGS = -20V

––– 1.4 ––– Ω f = 1MHz, open drain

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

gfs

Forward Transconductance

160 ––– –––

Qg

Total Gate Charge

––– 170 250

Qgs

Gate-to-Source Charge

––– 46 –––

Qgd

Gate-to-Drain ("Miller") Charge

––– 62 –––

td(on)

Turn-On Delay Time

––– 26 –––

tr

Rise Time

––– 110 –––

td(off)

Turn-Off Delay Time

––– 68 –––

tf

Fall Time

––– 78 –––

Ciss

Input Capacitance

––– 7670 –––

Coss

Output Capacitance

––– 540 –––

Crss

Reverse Transfer Capacitance

––– 280 –––

i Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 650 –––

h Coss eff. (TR) Effective Output Capacitance (Time Related)

––– 720.1 –––

S VDS = 50V, ID = 75A

nC ID = 75A

g VDS = 80V

VGS = 10V

ns VDD = 65V

ID = 75A

g RG = 2.6Ω

VGS = 10V

pF VGS = 0V

VDS = 50V

ƒ = 1.0MHz

j VGS = 0V, VDS = 0V to 80V , See Fig.11

h VGS = 0V, VDS = 0V to 80V , See Fig. 5

Diode Characteristics

Symbol

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

Ãdi (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

IRRM

Reverse Recovery Current

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

™ ––– ––– 130 A MOSFET symbol

D

showing the

––– ––– 550

integral reverse

G

p-n junction diode.

S

g ––– ––– 1.3 V TJ = 25°C, IS = 75A, VGS = 0V

––– 45 68 ns TJ = 25°C

VR = 85V,

––– 55 83

TJ = 125°C

––– 82 120 nC TJ = 25°C

g IF = 75A

di/dt = 100A/µs

––– 120 180

TJ = 125°C

––– 3.3 ––– A TJ = 25°C

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Calculated continuous current based on maximum allowable junction † Coss eff. (TR) is a fixed capacitance that gives the same charging time

temperature. Package limitation current is 75A

as Coss while VDS is rising from 0 to 80% VDSS.

‚ Repetitive rating; pulse width limited by max. junction

‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as

temperature.

ƒ Limited by TJmax, starting TJ = 25°C, L = 0.35mH

Coss while VDS is rising from 0 to 80% VDSS.

ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended

RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use

above this value.

footprint and soldering techniques refer to application note #AN-994.

‰ Rθ is measured at TJ approximately 90°C.

„ ISD ≤ 75A, di/dt ≤ 550A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

… Pulse width ≤ 400µs; duty cycle ≤ 2%.

2

www.irf.com

Share Link: