IS62LV12816LL(2000_11) View Datasheet(PDF) - Integrated Silicon Solution
Part Name
Description
Manufacturer
IS62LV12816LL Datasheet PDF : 10 Pages
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IS62LV12816L/LL
128K x 16 CMOS STATIC RAM
ISSI®
JANUARY 2000
FEATURES
• High-speed access time: 55, 70, 100 ns
• CMOS low power operation
– 120 mW (typical) operating
– 6 µW (typical) CMOS standby
• TTL compatible interface levels
• Single 2.5V-3.0V VCC power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in the 44-pin TSOP (Type II) and
48-pin mini BGA
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ISSI IS62LV12816L and IS62LV12816LL are high-
speed, 2,097,152-bit static RAMs organized as 131,072
words by 16 bits. They are fabricated using ISSI's high-
performance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields
high-performance and low power consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs, CE and OE. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A data
byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IS62LV12816L and IS62LV12816LL are packaged in the
JEDEC standard 44-pin TSOP (Type II) and 48-pin mini BGA.
A0-A16
DECODER
128K x 16
MEMORY ARRAY
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
UB
LB
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. C
03/17/00
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