Pores-tI-rIrraraddiaiatitoionn
IRHN7250, JANSR2N7269U
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of
VGSS Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response
of Rad Hard HEXFET During 1x1012
Rad (Si)/Sec Exposure
www.irf.com
Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
5