IRF2204 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

IRF2204

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

IRF2204，IIRF2204

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID =250μA

VGS(th)

Gate Threshold Voltage

VDS=10V; ID =250μA

RDS(on)

Drain-Source On-Resistance

VGS=10V; ID=130A

IGSS

Gate-Source Leakage Current

VGS=±20V

IDSS

Drain-Source Leakage Current VDS=40V; VGS= 0V

VSD

Diode forward voltage

IS=130A, VGS = 0 V

MIN TYP MAX UNIT

40

V

2.0

4.0

V

3.6 mΩ

±0.2 μA

20

μA

1.3

V

isc website：www.iscsemi.cn

2 isc & iscsemi is registered trademark

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