BTS7710GP View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BTS7710GP

TrilithIC

Infineon Technologies 

BTS 7710 GP

3.3 Electrical Characteristics (cont’d)

ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 C < Tj < 150 C; 8 V < VS < 18 V

unless otherwise specified

Parameter

Symbol Limit Values Unit Test Condition

min. typ. max.

Output stages

Inverse diode of high-side VFH

–

switch; Forward-voltage

Inverse diode of lowside VFL

–

switch; Forward-voltage

Static drain-source

on-resistance of highside

switch

R – DS ON H

Static drain-source

on-resistance of lowside

switch

R – DS ON L

Static path on-resistance RDS ON –

0.8 1.2 V IFH = 3A

0.8 1.2 V IFL = 3 A

70 90 mτ ISH = 1 A

Tj = 25 C

40 50 mτ ISL = 1 A;

VIL = 5 V

Tj = 25 C

–

260

mτ

R + R DS ON H

DS ON L

ISH = 1 A;

Short Circuit of highside switch to GND

Initial peak SC current

Initial peak SC current

Initial peak SC current

ISCP H

15

18

20

A

Tj = – 40 °C

ISCP H

13

15

17

A

Tj = + 25 °C

ISCP H

9

11 13 A Tj = + 150 °C

Short Circuit of highside switch to VS

Output pull-down-resistor RO

8

15 35 kτ VDSL = 3 V

Thermal Shutdown

Thermal shutdown junction Tj SD

temperature

Thermal switch-on junction Tj SO

temperature

Temperature hysteresis αT

155 180 190 C –

150 170 180 C –

–

10 –

C αT = TjSD – TjSO

Data Sheet

10

2001-02-01

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