BTS7710GP View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BTS7710GP

TrilithIC

Infineon Technologies 

BTS 7710 GP

3.3 Electrical Characteristics (cont’d)

ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 C < Tj < 150 C; 8 V < VS < 18 V

unless otherwise specified

Parameter

Symbol Limit Values Unit Test Condition

min. typ. max.

Gate charge of lowside switch

Input to source charge

QIS

–

4

6

nC ISL = 3 A; VS = 14 V

Input to drain charge

QID

–

10 16 nC ISL = 3 A; VS = 14 V

Input charge total

QI

–

28 43 nC ISL = 3 A; VS = 14 V

VIL = 0 to 10 V

Input plateau voltage

V(plateau)

–

2.75 -

V

ISL = 3 A; VS = 14 V

Note: switching times and input charges are guaranteed by design

Control Inputs of highside switches IH 1, 2

H-input voltage

L-input voltage

Input voltage hysterese

H-input current

L-input current

Input series resistance

Zener limit voltage

VIH High

–

–

2.5 V –

VIH Low

1

–

–

V–

VIH HY

–

0.3 –

V–

IIH High

15

30

60

←A VGH = 5 V

IIH Low

5

–

20 ←A VGH = 0.4 V

RI

2.7 4

5.5 kτ –

VIH Z

5.4 –

–

V

IGH = 1.6 mA

Control Inputs IL1, 2

Gate-threshold-voltage

VIL th

0.9 1.7 2.2 V IDL = 1 mA

Note: The listed characteristics are ensured over the operating range of the integrated

circuit. Typical characteristics specify mean values expected over the production

spread. If not otherwise specified, typical characteristics apply at TA = 25 C and

the given supply voltage.

Data Sheet

12

2001-02-01

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