IRLR024NTRPBF View Datasheet(PDF) - Unspecified
Part Name
Description
Manufacturer
IRLR024NTRPBF Datasheet PDF : 8 Pages
| |||
IRLR024NTRPBF
www.VBsemi.tw
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 60 V, V GS = 0 V
VDS = 60 V, V GS = 0 V, TJ = 125 °C
VDS = 60 V, V GS = 0 V, TJ = 150 °C
VDS 10 V, VGS = 10 V
VGS = 10 V, ID = 6.6 A
VGS = 4.5 V, ID = 6 A
VDS = 15 V, ID = 6.6 A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 30 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Crss
Qg
Qgs
VDS = 30 V, VGS = 10 V, ID = 6.6 A
Qgd
Gate Resistance
Rg
f = 1 MHz
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 30 V, RL = 9.6
ID 5.2 A, VGEN = 10 V, Rg = 1
Fall Timec
tf
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 30 V, RL = 9.6
ID 5.2 A, VGEN = 4.5 V, Rg = 1
Fall Timec
tf
Drain-Source Body Diode Ratings and Characteristicsb TC = 25 °C
Continuous Current
IS
Pulsed Current
Forward Voltagea
ISM
VSD
IF = 5.2 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = 5.2 A, dI/dt = 100 A/µs
Reverse Recovery Charge
Qrr
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min.
60
1.0
20
0.4
Typ.
0.073
0.083
25
860
85
40
19.8
3.6
4.1
2
8
11
18
5
38
58
18
8
0.8
34
3
50
Max.
3.0
± 250
1
50
250
30
4
16
20
27
10
57
87
27
16
16.9
25
1.5
51
5
75
Unit
V
nA
µA
A
S
pF
nC
ns
A
V
ns
A
nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
E-mail：China@VBsemi TEL:86-755-83251052
2
Share Link: 