IPG20N06S4L-26A View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

IPG20N06S4L-26A

OptiMOS™-T2 Power-Transistor

Infineon Technologies 

OptiMOS™-T2 Power-Transistor

Features

• Dual N-channel Logic Level - Enhancement mode

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

• Feasible for automatic optical inspection (AOI)

IPG20N06S4L-26A

Product Summary

VDS

RDS(on),max4)

ID

60 V

26 mΩ

20 A

PG-TDSON-8-10

Type

IPG20N06S4L-26A

Package

PG-TDSON-8-10

Marking

4N06L26

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Continuous drain current

one channel active

ID

T C=25 °C, V GS=10 V1)

Pulsed drain current2)

one channel active

Avalanche energy, single pulse2, 4)

Avalanche current, single pulse4)

Gate source voltage

Power dissipation

one channel active

T C=100 °C,

V GS=10 V2)

I D,pulse -

E AS

I AS

V GS

I D=10A

-

-

P tot

T C=25 °C

Operating and storage temperature T j, T stg -

Value

Unit

20

A

18

80

35

mJ

15

A

±16

V

33

W

-55 ... +175

°C

Rev. 1.0

page 1

2013-02-28

Share Link: