SPU07N20G View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

SPU07N20G

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

SPU07N20G

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP MAX UNIT

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA

200

V

VGS(th)

Gate Threshold Voltage

VDS=VGS; ID=1.0mA

2.1

4.0

V

RDS(on) Drain-Source On-Resistance

VGS= 10V; ID=4.5A

400

mΩ

IGSS

IDSS

VSDF

Gate-Source Leakage Current

Drain-Source Leakage Current

Diode forward voltage

VGS= ±30V;VDS= 0V

VDS= 200V; VGS= 0V;Tj=25℃

VDS= 200V; VGS= 0V;Tj=125℃

ISD=7A, VGS =0V

±0.1 μA

1

100

μA

1.7

V

isc website：www.iscsemi.cn

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