SPD28N05L View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

SPD28N05L

SIPMOS® PowerTransistor

Infineon Technologies 

SPD 28N05L

Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Dynamic Characteristics

Gate to source charge

VDD = 40 V, ID = 28 A

Gate to drain charge

VDD = 40 V, ID = 28 A

Gate charge total

VDD = 40 V, ID = 28 A, VGS = 0 to 10 V

Gate plateau voltage

VDD = 40 V, ID = 28 A

Qgs

-

Qgd

-

Qg

-

V(plateau)

-

4

6 nC

12 18

32 50

4

-V

Reverse Diode

Inverse diode continuous forward current

IS

TC = 25 ˚C

-

-

28 A

Inverse diode direct current,pulsed

TC = 25 ˚C

Inverse diode forward voltage

VGS = 0 V, IF = 56 A

Reverse recovery time

VR = 30 V, IF=IS , diF/dt = 100 A/µs

ISM

-

- 112

VSD

-

1.1 1.8 V

trr

-

60 90 ns

Reverse recovery charge

VR = 30 V, IF=lS , diF/dt = 100 A/µs

Qrr

- 0.15 0.25 µC

Data Sheet

4

06.99

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