BFQ193 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BFQ193 Datasheet PDF : 4 Pages
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NPN Silicon RF Transistor
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT = 7.5 GHz
F = 1.3 dB at 900 MHz
BFQ 193
1
2
3
2
VPS05162
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFQ 193
RC
1=B
2=C
3=E
SOT-89
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS 93 °C 1)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
Value
Unit
12
V
20
20
2
80
mA
10
600
mW
150
°C
-65 ... 150
-65 ... 150
95
K/W
1TS is measured on the collector lead at the soldering point to the pcb
1
Oct-12-1999
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