BFQ19 View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

BFQ19

NPN 5 GHz wideband transistor

Philips Electronics 

Philips Semiconductors

NPN 5 GHz wideband transistor

Product specification

BFQ19

120

handbook, halfpage

h FE

80

MBB774

40

0

0

40

80

120

I C (mA)

VCE = 10 V; Tj = 25 °C.

Fig.2 DC current gain as a function of collector

current.

handbook, h5alfpage

Cc

(pF)

4

MBB830

3

2

1

0

0

5

10

15

20

V CB (V)

IE = ie = 0; f = 1 MHz; Tj = 25 °C.

Fig.3 Collector capacitance as a function of

collector-base voltage.

8

handbook, halfpage

fT

(GHz)

6

MBB773

4

2

0

0

40

80 I C (mA) 120

VCE = 10 V; f = 500 MHz; Tj = 25 °C.

Fig.4 Transition frequency as a function of

collector current.

September 1995

4

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