2SB688 View Datasheet(PDF) - Unspecified

Part Name

Description

Manufacturer

2SB688

PNP EPITAXIAL SILICON TRANSISTOR

Unspecified 

2SB688

IC - VCE

-10

COMMON EMITTER

-8

-400mA -300mA

TC=25℃

-200mA

-6

-100mA

-4

-50mA

-2

IB= -20mA

0mA

0

0

-2

-4

-6 -8 -10 --12 -14

COLLECTOR EMITTER VOLTAGE, VCE (V)

VCE(sat) - IC

-5

-3 COMMON EMITTER

IC/IB=10

-1

-0.5

-0 3

-0.1

-0.05

-0.03

TC=100 ℃

TC=25℃

TC=-25 ℃

-0.01

-0 01 -0.03 -0.1 -0 3

-1

-3 -10

COLLECTOR CURRENT, IC (A)

hFE - IC

1K

COMMON EMITTER

500

VCE=-5V

300

TC=100℃

TC=25℃

100

TC= -25℃

50

30

10

-0.01 -0.03 -0.1 -0.3 -1

-3

-10

COLLECTOR CURRENT, IC (A)

100

(1)

80

60

(2)

40 (3)

PC - Ta

(1)Ta=Tc

INFINITEHEATSINK

(2)300×300×2mm A1

HEAT SINK

(3)200×200×2mm A1

HEAT SINK

(4)100×100×2mm A1

HEAT SINK

(5)NO HEAT SINK

20 (4)

(5)

0

0

40

80

120

160 200 240

AMBIENT TEMPERATURE, Ta (℃)

SAFE OPERATING AREA

-30

IC MAX. (PULSED)※

IC MAX

-10

-5

-3

(CONTINUOUDCT)CO=P25E℃RATION

t=1ms※

t=10ms※

t=100ms※

t=500ms※

-1

※SINGLE NONREPETITIVE

-0.5

PULSE TC=25℃

-0.3 CURVES MUST BE DERATED

LINEARLY WITH INCREASE

IN TEMPERATURE.

-0.1

-1

-3 -10

-30

-100

-300

COLLECTOR EMITTER VOLTAGE, VCE (V)

2011. 02. 22

Revision No : 0

2/2

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