2SB1155 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
Manufacturer
2SB1155 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -7A; IB= -0.35A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -15A; IB= -1.5A
VBE(sat)-1 Base -Emitter Saturation Voltage
IC= -7A; IB= -0.35A
VBE(sat)-2 Base -Emitter Saturation Voltage
IC= -15A; IB= -1.5A
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.1A; VCE= -2V
hFE-2
DC Current Gain
IC= -3A; VCE= -2V
hFE-3
DC Current Gain
IC= -8A; VCE= -2V
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -10V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -7A, IB1= -IB2= -0.7A;
VCC= -50V
hFE-2Classifications
Q
P
90-180 130-260
2SB1155
MIN TYP. MAX UNIT
-80
V
-0.5 V
-1.5 V
-1.5 V
-2.5 V
-10 μA
-50 μA
45
90
260
30
25
MHz
0.5
μs
1.3
μs
0.2
μs
SPTECH website：www.superic-tech.com
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