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P2N2222AZL1G View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
P2N2222AZL1G
ON-Semiconductor
ON Semiconductor ON-Semiconductor
P2N2222AZL1G Datasheet PDF : 6 Pages
1 2 3 4 5 6
P2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 30 Vdc, VBE(off) = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc) (Figure 2)
td
10
ns
tr
25
ns
ts
225
ns
tf
60
ns
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+16 V
0
−2 V
1000
700
500
300
200
100
70
50
30
20
10
0.1
1.0 to 100 ms,
DUTY CYCLE 2.0%
1 kW
< 2 ns
Figure 1. TurnOn Time
+30 V
200
+16 V
1.0 to 100 ms,
DUTY CYCLE 2.0%
CS* < 10 pF
0
−14 V
< 20 ns
1k
1N914
Scope rise time < 4 ns
−4 V
*Total shunt capacitance of test jig,
connectors, and oscilloscope.
Figure 2. TurnOff Time
+30 V
200
CS* < 10 pF
TJ = 125°C
0.2 0.3 0.5 0.7 1.0
25°C
−55°C
VCE = 1.0 V
VCE = 10 V
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 4. DC Current Gain
50 70 100
200 300 500 700 1.0 k
1.0
0.8
0.6
IC = 1.0 mA
10 mA
150 mA
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
TJ = 25°C
500 mA
10
20 30 50
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