STB90NF03L View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STB90NF03L
STMicroelectronics
STB90NF03L Datasheet PDF : 8 Pages
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STB90NF03L
N-CHANNEL 30V - 0.0056Ω - 90A D2PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB90NF03L
30 V < 0.0065 Ω 90 A
s TYPICAL RDS(on) = 0.0056 Ω
s TYPICAL Qg = 35 nC @ 5V
s OPTIMAL RDS(on) x Qg TRADE-OFF
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique “Single
Feature Size™” strip-based process. The resulting
transistor shows the best trade-off between on-re-
sistance and gate charge. When used as high and
low side in buck regulators, it gives the best perfor-
mance in terms of both conduction and switching
losses. This is extremely important for mother-
boards where fast switching and high efficiency are
of paramount importance.
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
October 2001
Value
30
30
± 18
90
65
360
150
0.73
– 55 to 175
Unit
V
V
V
A
A
A
W
W/°C
°C
1/8
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