MMBTA44 View Datasheet(PDF) - Jiangsu High diode Semiconductor Co., Ltd
Part Name
Description
Manufacturer
MMBTA44 Datasheet PDF : 4 Pages
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MMBTA4 4
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
● High Collector-Emitter Voltage
● Complement to MMBTA94
SOT- 23
Marking:
● 3D
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
400
Collector-Emitter Voltage
400
Emitter-Base Voltage
6
Collector Current
200
Collector Power Dissipation
350
Thermal Resistance From Junction To Ambient
357
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
C
B
E
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO*
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
hFE(1) *
DC current gain
hFE(2) *
hFE(3) *
hFE(4) *
VCE(sat)1*
Collector-emitter saturation voltage
VCE(sat)2*
VCE(sat)3*
Base-emitter saturation voltage
VBE(sat)*
Collector output capacitance
Cob
Emitter input capacitance
Cib
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Test conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=400V, IE=0
VEB=4V, IC=0
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
IC=1mA, IB=0.1mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
VCB=20V, IE=0, f=1MHz
VEB=0.5V, IC=0, f=1MHz
Min
Typ
Max Unit
400
V
400
V
6
V
0.1
µA
0.1
µA
40
50
200
45
40
0.4
V
0.5
V
0.75
V
0.75
V
7
pF
130
pF
High Diode Semiconductor
1
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