BAS70-05W View Datasheet(PDF) - TY Semiconductor

Part Name

Description

Manufacturer

BAS70-05W

Schottky barrier(double) diodes

TY Semiconductor 

Product specification

BAS70W;BAS70-04W

BAS70-05W;BAS70-06W

Features

Low forward voltage

High breakdown voltage

Guard ring protected

Very small SMD package

Low capacitance.

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Conditions

Min

Continuous reverse voltage

VR

Continuous forward current

IF

Repetitive peak forward current

IFRM

tp 1 s; ä 0.5

Non-repetitive peak forward current

IFSM

tp 10 ms

Storage temperature

Tstg

-65

Junction temperature

Tj

Operating ambient temperature

Tamb

-65

Thermal resistance from junction to ambient

Rth j-a

Note 1

Electrical Characteristics Ta = 25

Param eter

Forward Voltage

Sym bol

VF

Reverse Current

IR

Charge carrier life tim e (Krakauer m ethod)

Diode capacitance

Cd

Note

1. Pulse test: tp = 300 m s; d = 0.02.

C o n d itio n

IF = 1 m A

IF = 10 m A

IF = 15 m A

VR = 50 V; note 1

VR = 70 V; note 1

IF = 5 m A

f = 1 MHz; VR = 0

Max

70

70

70

100

+150

150

+150

625

Unit

V

mA

mA

mA

K/W

Max

410

750

1

100

10

100

2

U n it

mV

mV

V

nA

A

ps

pF

Marking

Type

Marking

BAS70W

73*

BAS70-04W

74*

BAS70-05W

75*

BAS70-06W

76*

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

1 of 1

Share Link: