MAC4DHM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient(1)
Maximum Lead Temperature for Soldering Purposes(2)
(1) Surface mounted on minimum recommended pad size.
(2) 1/8″ from case for 10 seconds.
Symbol
Max
RqJC
3.5
RqJA
88
RqJA
80
TL
260
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 110°C
ON CHARACTERISTICS
Peak On–State Voltage(1)
(ITM = ± 6.0 A)
W Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 )
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
W Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 )
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
IDRM,
IRRM
VTM
IGT
VGT
—
—
0.01
—
—
2.0
—
1.3
1.6
—
1.8
5.0
—
2.1
5.0
—
2.4
5.0
—
4.2
10
0.5
0.62
1.3
0.5
0.57
1.3
0.5
0.65
1.3
0.5
0.74
1.3
Gate Non–Trigger Voltage (Continuous dc)
W (VD = 12 V, RL = 100 , TJ = 110°C)
All Four Quadrants
VGD
0.1
0.4
—
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ± 200 mA)
Latching Current
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
(VD = 12 V, IG = 5.0 mA)
(VD = 12 V, IG = 5.0 mA)
(VD = 12 V, IG = 5.0 mA)
(VD = 12 V, IG = 10 mA)
DYNAMIC CHARACTERISTICS
IH
—
1.5
15
IL
—
1.75
10
—
5.2
10
—
2.1
10
—
2.2
10
Characteristic
Symbol
Min
Typ
Max
Rate of Change of Commutating Current
m (VD = 200 V, ITM = 1.8 A, Commutating dv/dt = 1.0 V/ sec,
m W TJ = 110°C, f = 250 Hz, CL = 5.0 fd, LL = 80 mH, RS = 56 ,
m CS = 0.03 fd) With snubber see Figure 11
di/dt(c)
—
3.0
—
Critical Rate of Rise of Off–State Voltage
(VD = 0.67 X Rated VDRM, Exponential Waveform,
Gate Open, TJ = 110°C)
(1) Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
dv/dt
20
—
—
Unit
°C/W
°C
Unit
mA
Volts
mA
Volts
Volts
mA
mA
Unit
A/ms
V/ms
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