2SA1489 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SA1489 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)GEO Collector-Emitter Breakdown Voltage lc= -50mA ; le= 0
VcE(sat) Collector-Emitter Saturation Voltage
|c= -2A; IB= -0.2A
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; lc= 0
hFE
DC Current Gain
lc= -2A; VCE= -4V
fy
Current-Gain—Bandwidth Product
IE=0.5A;VCE=-12V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc=-3A, RL=10n,
lei= -lB2= -0.3A.Vccr -30V
2SA1489
MIN TYP. MAX UNIT
-80
V
-1.5
V
-100 u A
-100 u A
50
20
MHz
0.25
Ms
0.5
us
0.1
us
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